- The Effect of Etchant Composition on Film Structure During Laser-Assisted Porous Si Growth, A Wellner, L Koker, KW Kolasinski, M Aindow and RE Palmer, Phys Stat Sol 182: 87-91 (2000).
- On the Role of the Pore Filling Medium in Photoluminescence from Photochemically Etched Porous Silicon, KW Kolasinski, JC Barnard, S Ganguly, L Koker, A Wellner, M Aindow, RE Palmer, CN Field, PA Hamley, and M Poliakoff, J Appl Phys 88: 2472-2479 (2000).
- Identifying the Character of Intrinsic Stacking Faults in the A15 Compound Nb3Al, TS Rong, LS Smith, M Aindow, IP Jones, and MH Loretto, Phil Mag Lett 80: 519-524 (2000).
- Analysis of a 69.3˚ Vicinal HAGB in Pure Titanium, S Wang and M Aindow, Interface Sci 8: 17-25 (2000).
- Interfacial Dislocation Mechanism For Diffusional Phase Transformations Exhibiting Martensitic Crystallography: Formation Of TiAl + Ti3Al Lamellae, RC Pond, P Shang, TT Cheng and M Aindow, Acta Mater 48: 1047-1053 (2000).
- Orientational and Translational Ordering of Sub-Monolayer Films of Passivated Multiply Twinned Gold Clusters, A Wellner, PD Nellist, RE Palmer, M Aindow and JP Wilcoxon, J Phys D: Appl Phys 33 L23-L26 (2000).
- High-Resolution Electron Microscopy of Steps on Lamellar γ/α2 Interfaces in a Ti – 44 at% Al – 8 at% Nb Alloy, P Shang, TT Cheng and M Aindow, Phil Mag Lett 80: 1-10 (2000).
Aindow Research Group
University of Connecticut
